HGTG27N120BN Fairchild Semiconductor, HGTG27N120BN Datasheet - Page 5

• Manufacturer Part Number: HGTG27N120BN
• Description: IGBT NPT N-CH 1200V 72A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG27N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 27A
• Current - Collector (ic) (max): 72A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 72 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
350
300
250
200
150
100
400
350
300
250
200
150
50
10
0
8
6
4
2
0
5
7
0
DUTY CYCLE <0.5%, V
250 s PULSE TEST
T
FREQUENCY = 1MHz
FIGURE 13. TRANSFER CHARACTERISTIC
R
C
C
G
10
RES
= 150
= 3 , L = 1mH, V
EMITTER CURRENT
VOLTAGE
8
V
I
CE
CE
15
T
o
, COLLECTOR TO EMITTER CURRENT (A)
C
C
V
, COLLECTOR TO EMITTER VOLTAGE (V)
5
V
GE
= 25
GE
C
9
20
C
, GATE TO EMITTER VOLTAGE (V)
OES
IES
= 12V, V
o
C
25
10
CE
10
CE
GE
= 960V
30
V
= 20V
GE
= 15V, T
11
= 12V, V
35
15
J
T
12
40
HGTG27N120BN / HGT5A27N120BN
= 150
C
GE
= -55
= 15V, T
Unless Otherwise Specified (Continued)
45
o
C
o
13
C
20
50
J
= 25
14
55
o
C
25
60
15
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
16
14
12
10
250
200
150
100
8
6
4
2
0
50
40
35
30
25
20
15
10
0
0
5
0
5
0
I
G(REF)
DUTY CYCLE <0.5%, T
250 s PULSE TEST
R
T
FIGURE 14. GATE CHARGE WAVEFORMS
G
J
10
= 25
0.5
= 3 , L = 1mH, V
CURRENT
= 2mA, R
I
V
50
CE
CE
o
15
V
C, V
, COLLECTOR TO EMITTER CURRENT (A)
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
1.0
CE
GE
= 1200V
20
L
= 400V
100
= 12V OR 15V
= 22.2 , T
Q
1.5
G
25
, GATE CHARGE (nC)
CE
C
= 960V
2.0
= 110
30
HGTG27N120BN / HGT5A27N12BN Rev. C2
C
150
V
T
GE
= 25
J
o
35
C
= 150
2.5
= 15V
o
C
40
o
200
C, V
3.0
V
CE
GE
45
= 800V
3.5
= 12V OR 15V
V
250
50
GE
= 10V
4.0
55
300
4.5
60