HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet - Page 7

• Manufacturer Part Number: HGTP20N60A4
• Description: IGBT N-CH SMPS 600V 70A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP20N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 290 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Voltage, Vces: 600V
• Current, Ic Continuous A Max: 70A
• Voltage, Vce Sat Max: 2.7V
• Case Style: TO-220AB
• Current, Icm Pulsed: 280A
• Pin Format: GCE
• Pins, No. Of: 3
• Rohs Compliant: Yes
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP20N60A4_NL; HGTP20N60A4_NL

Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
©2001 Fairchild Semiconductor Corporation
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
circuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
GEM
. Exceeding the rated V
GE
can result in
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
f
allowable dissipation (P
The sum of device switching and conduction losses must not
exceed P
conduction losses (P
P
E
shown in Figure 21. E
instantaneous power loss (I
E
(I
calculation for E
(I
MAX1
MAX2
C
CE
CE
ON2
OFF
= (V
= 0).
x V
is the integral of the instantaneous power loss
and E
is defined by f
is defined by f
CE
CE
D
. A 50% duty factor was used (Figure 3) and the
x I
) during turn-off. All tail losses are included in the
OFF
CE
d(OFF)I
MAX1
)/2.
OFF
are defined in the switching waveforms
C
; i.e., the collector current equals zero
MAX2
MAX1
or f
) are approximated by
and t
ON2
D
MAX2
) is defined by P
= (P
is the integral of the
d(ON)I
= 0.05/(t
CE
; whichever is smaller at each
D
x V
CE
- P
HGTG20N60A4, HGTP20N60A4 Rev. B
are defined in Figure 21.
CE
) plots are possible using
d(OFF)I
C
)/(E
) during turn-on and
D
OFF
= (T
+ t
d(ON)I
+ E
JM
JM
ON2
- T
.
).
C
). The
)/R
JC
.