HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet - Page 5

• Manufacturer Part Number: HGTP20N60A4
• Description: IGBT N-CH SMPS 600V 70A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP20N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 290 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Voltage, Vces: 600V
• Current, Ic Continuous A Max: 70A
• Voltage, Vce Sat Max: 2.7V
• Case Style: TO-220AB
• Current, Icm Pulsed: 280A
• Pin Format: GCE
• Pins, No. Of: 3
• Rohs Compliant: Yes
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP20N60A4_NL; HGTP20N60A4_NL

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
240
200
160
120
120
110
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
80
40
90
80
70
60
0
0
6
25
5
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
FIGURE 13. TRANSFER CHARACTERISTIC
E
R
G
TOTAL
G
= 3 , L = 500 H, V
= 3 , L = 500 H, V
EMITTER CURRENT
TEMPERATURE
I
10
CE
7
= E
, COLLECTOR TO EMITTER CURRENT (A)
50
V
ON2
V
GE
V
GE
GE
T
T
15
, GATE TO EMITTER VOLTAGE (V)
J
C
+ E
= 12V, V
= 125
, CASE TEMPERATURE (
= 12V, V
8
OFF
T
75
J
CE
o
CE
CE
20
= 25
C
I
I
I
CE
CE
CE
GE
GE
= 390V
= 390V, V
= 10V
= 30A
= 20A
= 10A
o
= 15V, T
9
= 15V, T
C
T
25
J
100
= -55
GE
J
J
10
= 125
= 25
o
= 15V
Unless Otherwise Specified (Continued)
C
30
o
o
o
C)
C
C
125
11
35
150
12
40
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
16
14
12
10
0.1
8
6
4
2
0
10
80
72
64
56
48
40
32
24
16
1
0
3
5
I
G(REF)
E
T
R
TOTAL
J
FIGURE 14. GATE CHARGE WAVEFORMS
G
= 125
V
= 3 , L = 500 H, V
20
CE
CURRENT
I
10
= 1mA, R
CE
= E
= 600V
o
V
C, L = 500 H, V
, COLLECTOR TO EMITTER CURRENT (A)
10
CE
ON2
40
I
I
I
CE
CE
CE
T
= 200V
T
15
J
+ E
J
L
R
= 30A
= 20A
= 10A
Q
= 125
= 25
G
= 15 , T
G
OFF
, GATE RESISTANCE ( )
60
, GATE CHARGE (nC)
V
o
CE
CE
o
C, V
C, V
20
CE
= 400V
= 390V
J
GE
80
= 25
GE
= 390V, V
HGTG20N60A4, HGTP20N60A4 Rev. B
= 12V OR 15V
= 12V OR 15V
o
25
C
100
100
GE
= 15V
30
120
140
35
1000
160
40