HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet - Page 6

• Manufacturer Part Number: HGTP20N60A4
• Description: IGBT N-CH SMPS 600V 70A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP20N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 290 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Voltage, Vces: 600V
• Current, Ic Continuous A Max: 70A
• Voltage, Vce Sat Max: 2.7V
• Case Style: TO-220AB
• Current, Icm Pulsed: 280A
• Pin Format: GCE
• Pins, No. Of: 3
• Rohs Compliant: Yes
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP20N60A4_NL; HGTP20N60A4_NL

Typical Performance Curves
Test Circuit and Waveforms
©2001 Fairchild Semiconductor Corporation
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
5
4
3
2
1
0
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
0
C
10
10
FREQUENCY = 1MHz
RES
10
-1
-2
0
10
R
C
G
-5
OES
VOLTAGE
0.05
0.02
0.01
V
= 3
0.5
0.2
0.1
C
CE
IES
20
, COLLECTOR TO EMITTER VOLTAGE (V)
SINGLE PULSE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
40
10
L = 500 H
-4
60
DUT
HGTG20N60A4D
DIODE TA49372
+
-
Unless Otherwise Specified (Continued)
V
80
DD
t
1
= 390V
, RECTANGULAR PULSE DURATION (s)
10
100
-3
V
V
I
CE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
GE
CE
2.2
2.1
2.0
1.9
1.8
1.7
10
8
FIGURE 21. SWITCHING TEST WAVEFORMS
-2
vs GATE TO EMITTER VOLTAGE
9
t
d(OFF)I
90%
V
GE
10%
10
, GATE TO EMITTER VOLTAGE (V)
DUTY FACTOR, D = t
PEAK T
t
fI
11
P
J
E
D
= (P
10
OFF
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250 s,
90%
-1
12
D
HGTG20N60A4, HGTP20N60A4 Rev. B
X Z
t
1
t
E
2
ON2
JC
13
1
10%
/ t
X R
2
t
d(ON)I
I
I
I
CE
CE
CE
JC
14
t
rI
= 20A
= 10A
) + T
= 30A
J
C
= 25
15
10
0
o
C
16