HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet

IGBT N-CH SMPS 600V 70A TO220AB

HGTP20N60A4

Manufacturer Part Number
HGTP20N60A4
Description
IGBT N-CH SMPS 600V 70A TO220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTP20N60A4

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
70A
Power - Max
290W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
70 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
290 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Voltage, Vces
600V
Current, Ic Continuous A Max
70A
Voltage, Vce Sat Max
2.7V
Case Style
TO-220AB
Current, Icm Pulsed
280A
Pin Format
GCE
Pins, No. Of
3
Rohs Compliant
Yes
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
290W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-220AB
No. Of Pins
3
Svhc
No SVHC
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
HGTP20N60A4_NL
HGTP20N60A4_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTP20N60A4
Manufacturer:
TOSHIBA
Quantity:
20 000
Part Number:
HGTP20N60A4
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2001 Fairchild Semiconductor Corporation
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
HGTP20N60A4
HGTG20N60A4
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
o
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
C.
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-220AB
TO-247
PACKAGE
E
C
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
20N60A4
20N60A4
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
o
C
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
HGTG20N60A4, HGTP20N60A4
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T
• Low Conduction Loss
• Temperature Compensating SABER™ Model
• Related Literature
Packaging
www.intersil.com
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
December 2001
COLLECTOR
(FLANGE)
JEDEC TO-220AB ALTERNATE VERSION
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
JEDEC STYLE TO-247
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
HGTG20N60A4, HGTP20N60A4 Rev. B
COLLECTOR
E
(FLANGE)
G
C
C
E
G
4,587,713
4,644,637
4,801,986
4,883,767
J
= 125
o
C

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HGTP20N60A4 Summary of contents

Page 1

... Data Sheet 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower ...

Page 2

... D 2. -55 to 150 J STG 300 L 260 PKG MIN TYP 600 - 125 1 125 C - 1.6 J 4.5 5 15V 100 - 15V - 142 20V - 182 105 - 280 - 150 HGTG20N60A4, HGTP20N60A4 Rev. B UNITS MAX UNITS - 250 A 2.0 mA 2.7 V 2.0 V 7.0 V 250 162 nC 210 350 J 200 J ...

Page 3

... V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG20N60A4, HGTP20N60A4 Rev. B MAX UNITS 135 600 J 500 J o 0.43 C/W ON2 500 600 700 450 o C 400 350 300 250 200 150 100 ...

Page 4

... PULSE DURATION = 250 125 150 0.4 0.8 1.2 1 COLLECTOR TO EMITTER VOLTAGE ( 500 390V 125 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 500 390V 125 125 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG20N60A4, HGTP20N60A4 Rev 2.0 2.4 2.8 = 12V OR 15V 12V 15V ...

Page 5

... OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA G(REF 600V 400V 200V 100 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 500 390V TOTAL ON2 OFF 30A 20A 10A CE 0.1 10 100 GATE RESISTANCE ( ) G HGTG20N60A4, HGTP20N60A4 Rev 120 140 160 = 15V 1000 ...

Page 6

... HGTG20N60A4D DIODE TA49372 DUT + 390V DD - 2.2 DUTY CYCLE < 0.5%, T PULSE DURATION = 250 s, 2.1 2.0 1.9 1.8 1 GATE TO EMITTER VOLTAGE ( GATE TO EMITTER VOLTAGE DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF FIGURE 21. SWITCHING TEST WAVEFORMS HGTG20N60A4, HGTP20N60A4 Rev 30A 20A 10A d(ON)I ...

Page 7

... A 50% duty factor was used (Figure 3) and the ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTG20N60A4, HGTP20N60A4 Rev The ON2 - T )/ ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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