EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 93
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EGP20G
Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Specifications of EGP20G
Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP20G
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
EGP20G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGP20G-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
4 310
Part Number:
EGP20G-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
Bipolar Power Transistors – General Purpose Transistors (Continued)
MJD29C
KSH47
MJD47
KSH50
MJD50
FJD3076
KSC3233
KSH31
KSH31C
MJD31C
KSH200
KSH41C
MJD41C
KSH44H11
MJD44H11
KSH3055
MJD3055
TO-252(DPAK) PNP Configuration
KSH350
MJD350
KSH30
KSH32
KSH32C
MJD32C
KSH210
MJD210
KSH42C
KSH45H11
MJD45H11
KSH2955
MJD2955
TO-263(D
KSB834W
Products
2
PAK) PNP Configuration
I
C
0.5
0.5
10
10
10
10
1
1
1
1
1
2
2
3
3
3
5
6
6
8
8
1
3
3
3
5
5
6
8
8
3
(A) V
CEO
100
250
250
400
400
400
100
100
100
100
300
300
100
100
100
50
40
25
80
80
60
60
40
40
25
25
80
80
60
60
60
(V) V
CBO
100
350
350
500
500
500
100
100
100
100
300
300
100
100
100
50
40
40
70
70
40
40
40
40
70
70
60
–
–
–
–
(V) V
EBO
5
5
5
5
5
5
7
5
5
5
8
5
5
5
5
5
5
3
3
5
5
5
5
8
8
5
5
5
5
5
7
(V) P
C
12.5
12.5
12.5
15
15
15
15
15
10
20
15
15
15
20
20
20
20
20
20
15
15
15
15
15
15
20
20
20
20
20
30
(W)
Min
120
15
30
30
30
30
20
10
10
10
45
15
15
60
60
20
20
30
30
15
10
10
10
45
45
15
60
60
20
20
60
2-88
Discrete Power Products –
Max
150
150
150
150
270
180
100
100
240
240
180
180
100
100
200
75
50
50
50
75
75
75
50
50
50
75
–
–
–
–
–
h
FE
@I
0.05
0.05
0.3
0.3
0.3
0.3
0.5
0.1
0.5
C
1
3
3
3
2
3
3
2
2
4
4
1
3
3
3
2
2
3
2
2
4
4
(A) @V
10
10
10
10
10
10
CE
3
4
4
4
1
1
4
4
4
1
1
1
4
–
4
5
4
1
4
4
4
4
1
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.34
0.35
0.5
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.7
0.8
1.2
1.2
1.2
0.3
1.5
1.5
1.1
1.1
0.7
1.2
1.2
1.2
0.3
0.3
1.5
1.1
1.1
1
1
1
1
1
1
1
1
1
1
1
1
V
CE (sat)
0.5
0.3
0.1
0.5
0.5
C
1
1
1
1
1
2
1
3
3
3
6
6
8
8
4
4
1
3
3
3
6
8
8
4
4
3
(A) @I
0.125
0.375
0.375
0.375
0.125
0.375
0.375
0.375
0.05
0.06
0.01
0.05
0.05
0.2
0.2
0.2
0.2
0.2
0.2
0.6
0.6
0.4
0.4
0.4
0.4
0.6
0.4
0.4
0.4
0.4
0.3
B
(A)