EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 80

• Manufacturer Part Number: EGP20G
• Description: DIODE FAST GPP 2A 400V DO-15
• Manufacturer: Fairchild Semiconductor

Specifications of EGP20G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 2A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A @ Ta=55C
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 3.15 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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Bipolar Power Transistors – Anti-Saturation Transistors
TO-220 NPN Configuration
KSC5302D
KSC5402DT
KSC5603D
KSC5305D
KSC5338D
TO-252(DPAK) NPN Configuration
KSC5502D
TO-263(D
KSC5603D
Products
2
PAK) NPN Configuration
V
CBO
1000
1600
1000
1200
1600
800
800
(V) V
CEO
400
450
800
400
450
600
800
(V) V
EBO
12
12
12
12
12
12
12
(V)
I
C
2
2
3
5
5
2
3
(A)
P
C
100
100
50
30
75
75
50
(W)
Min
20
14
20
22
15
20
6
Max
35
40
35
–
–
–
–
2-75
Discrete Power Products –
h
FE
@I
0.4
0.4
0.4
0.8
0.2
0.4
C
2
(A) @V
CE
1
1
3
1
1
1
3
(V) Typ (V) Max (V) @I
0.25
0.47
0.31
0.5
0.5
–
–
1.25
0.75
1.25
0.4
0.6
0.4
0.8
V
Bipolar Transistors and JFETs
CE
(sat)
0.25
0.25
0.4
0.4
0.8
0.2
C
2
(A) @I
0.025
0.025
0.04
0.04
0.08
0.02
0.4
B
(A)
t
STG
0.175
0.175
0.65
2.2
2
2
2
(µs) t
0.175
F
0.15
0.2
0.2
0.2
0.2
0.2
(µs)