EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 102
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EGP20G
Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Specifications of EGP20G
Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP20G
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
EGP20G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGP20G-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
4 310
Part Number:
EGP20G-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
Small Signal Transistors – Digital Transistors (Continued)
FJNS3213R
FJNS3214R
FJNS3215R
TO-92S PNP Configuration
FJNS3211R
FJNS4209R
FJNS4210R
FJNS4211R
FJNS4212R
FJNS4201R
FJNS4202R
FJNS4203R
FJNS4204R
FJNS4205R
FJNS4206R
FJNS4207R
FJNS4208R
FJNS4213R
FJNS4214R
Products
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CEO
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
R
22
10
22
47
10
22
47
10
22
47
1
(KΩ)
4.7
R
47
47
10
10
22
47
10
47
47
22
47
47
–
–
–
–
–
2
Min
100
100
100
100
100
68
68
33
20
30
56
68
30
68
68
56
68
68
2-97
Discrete Power Products –
Max
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
5
5
1
1
1
1
1
5
5
5
5
5
5
5
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
1
1
1
(mA)