EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 23
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EGP20G
Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Specifications of EGP20G
Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP20G
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
EGP20G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGP20G-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
4 310
Part Number:
EGP20G-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
SO-8 (Continued)
FDS2572
FDS2582
FDS2570
HUF75831SK8T
HUFA75831SK8T
FDS2670
FQS4901
FQS4903
RF1K49092
FDS9934C
FDS8928A
FDS4501H
FDS8958A
SI4532DY
NDS9952A
FDS8333C
FDS4559
FQS4900
NDS9948
SSD2011A
NDS9407
FDS4675
FDS4935
FDS4935A
FDS6975
FDS8947A
SI4953DY
FDS6993
FDS4953
NDS9953A
FDS9953A
RF1K49223
RF1K4922396
FDS7779Z
FDS6679
FDS6679Z
FDS6675A
FDS6675
SO-8 Complementary N- and P-Channel
SO-8 P-Channel
Products
500 | 500
Min. (V)
60 | -300
-30 | -12
20 | -20
30 | -20
30 | -20
30 | -30
30 | -30
30 | -30
60 | -60
12 | 12
30 | 30
BV
150
150
150
150
150
200
400
-60
-60
-60
-40
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
DSS
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.028 | 0.052
0.065 | 0.085
0.055 | 0.105
0.08 | 0.13
0.55 | 15.5
0.08 | 0.13
0.0072
0.047
0.066
0.095
0.095
0.018
0.013
0.023
0.023
0.032
0.052
0.053
0.055
0.055
0.009
0.009
0.013
0.014
10V
0.13
0.25
0.28
0.15
0.13
0.15
4.2
6.2
–
–
R
0.65@5V | 16@5V
DS(ON)
0.046 | 0.023
0.075 | 0.135
0.017 | 0.085
0.03 | 0.055
0.03 | 0.055
0.095 | 0.19
0.053@6V
0.04 | 0.08
0.096@6V
2-18
0.13 | 0.2
0.0115
0.017
0.035
0.035
0.045
0.095
0.095
0.013
0.013
0.019
4.5V
0.24
0.08
0.36
0.02
0.5
0.5
0.2
–
–
–
–
–
–
Max (Ω) @ V
0.038 | 0.072
0.043 | 0.09
Replaced by HUF75831SK8T
0.063
0.024
2.5V
GS
Replaced by NDS9953A
Replaced by FDS8928A
Replaced by FDS9953A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
=
Discrete Power Products –
1.8V
0.03
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
10.7 | 9.6
19.8 | 20
12.5 | 15
6.2 | 8.7
4.7 | 4.1
1.6 | 3.6
9.5 | 10
17 | 13
3.7 | 5
Typ. (nC)
GS
14.5
5.8
6.3
2.5
1.5
29
11
35
35
27
23
16
40
15
15
19
70
71
67
24
30
9
8
–
6
= 5V
9.3 | 5.6
3.9 | 3.5
3.7 | 2.9
4.1 | 3.4
4.5 | 3.5
1.3 | 0.3
4.3 | 6.8
6.5 | –5
5.5 | 4
I
D
0.45
0.37
7 | 5
4.9
4.5
2.3
4.9
2.9
2.5
11
16
13
13
11
11
3
3
7
6
5
3
3
2
7
4
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.4
2.5
2.5
2.5
2.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
3
(W)