SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4310BDY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
• Manufacturer: Vishay

Specifications of SI4310BDY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 9.8 A @ Channel 2
• Power Dissipation: 1140 mW @ Channel 1 or 1470 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73064.
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.2
0.05
0.02
0.02
0.1
0.05
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
10
Single Pulse
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
500
400
300
200
100
0
0
10
-2
6
Square Wave Pulse Duration (s)
10
V
Square Wave Pulse Duration (s)
-2
KA
Capacitance
- Reverse Voltage (V)
10
12
-1
18
10
1
-1
24
30
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
Notes:
P
0
DM
JM
- T
A
t
1
= P
1
Vishay Siliconix
t
DM
2
Z
Si4310BDY
thJA
thJA
100
(t)
t
t
1
2
= 100 °C/W
www.vishay.com
6
0
1
0
0
9