SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4310BDY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
• Manufacturer: Vishay

Specifications of SI4310BDY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 9.8 A @ Channel 2
• Power Dissipation: 1140 mW @ Channel 1 or 1470 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4310BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
10
30
10
8
6
4
2
0
1
- 50
0.0
0
V
I
D
DS
- 25
Source-Drain Diode Forward Voltage
= 10 A
0.2
= 15 V
5
V
SD
0
Q
g
-
Threshold Voltage
T
0.4
- Total Gate Charge (nC)
S
J
T
Gate Charge
o
25
J
- Temperature (°C)
u
10
= 150 C
c r
e
t -
I
- o
0.6
D
50
D
= 250 µA
a r
n i
15
75
Voltage (V)
0.8
100
T
J
20
= 25 C
1.0
125
150
25
1.2
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0.001
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
I
V
I
D
- 25
D
GS
= 10 A
= 10 A
= 10 V
2
0.01
V
T
GS
0
J
Single Pulse Power
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
Time (s)
0.1
50
S09-2436-Rev. B, 16-Nov-09
Document Number: 73064
6
75
100
1
8
125
150
10
10