SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4310BDY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
• Manufacturer: Vishay

Specifications of SI4310BDY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 9.8 A @ Channel 2
• Power Dissipation: 1140 mW @ Channel 1 or 1470 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
0.0001
0.001
0.01
100
0.1
10
50
10
1
1
0.0
0
Reverse Current vs. Junction Temperature
Source-Drain Diode Forward Voltage
25
0.2
V
SD
V
DS
-
50
0.4
T
= 30 V
S
T
J
o
J
- Temperature (°C)
u
= 150 °C
c r
e
t -
- o
75
0.6
D
a r
T
n i
J
Limited by R
= 25 °C
V
100
o
0.8
0.01
a t l
100
0.1
10
g
1
0.1
e
(
V
) V
DS
125
* V
1.0
DS(on)
Safe Operating Area, Junction-to-Case
= 24 V
GS
*
> minimum V
V
150
DS
1.2
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25 C
GS
at which R
10
DS(on)
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
0
0
is specified
0 .
0
0
1
1 ms
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
I
D
= 14 A
100
2
V
0.01
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
4
Time (s)
0
1 .
Vishay Siliconix
Si4310BDY
6
www.vishay.com
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