SI4310BDY-E3 VISHAY [Vishay Siliconix], SI4310BDY-E3 Datasheet

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SI4310BDY-E3

Manufacturer Part Number
SI4310BDY-E3
Description
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 73064
S-41530—Rev. A, 16-Aug-04
G
G
D
D
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
S
S
S
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
1
1
1
2
2
2
2
Channel 1
Channel-1
Channel 2
Channel-2
Surface Mounted on 1” x 1” FR4 Board.
V
i
DS
1
2
3
4
5
6
7
30
(V)
J
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Top View
ti
SO-14
t A bi
V
DS
Parameter
Parameter
30
30
Diode Forward Voltage
(V)
J
J
a
a
14
13
12
11
10
9
8
= 150_C)
= 150_C)
t
a
a
0.53 V @ 3 A
S
S
D
D
D
D
D
V
1
1
2
2
2
2
2
SD
0.0095 @ V
0.0085 @ V
a
a
0.016 @ V
0.011 @ V
(V)
r
Ordering Information:
Si4310BDY—E3
Si4310BDY-T1—E3 (with Tape and Reel)
DS(on)
Steady-State
Steady-State
a
t v 10 sec
T
T
T
T
A
A
A
A
GS
GS
GS
GS
= 25_C
= 70_C
= 25_C
= 70_C
(W)
= 4.5 V
= 10 V
= 4.5 V
= 10 V
A
Symbol
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
R
R
R
V
J
V
I
P
P
, T
I
I
DM
I
thJA
thJF
I
DS
GS
D
D
S
New Product
F
D
D
stg
I
2.0
D
(A)
8.2
10
14
13
(A)
10 secs
Typ
53
92
35
Channel-1
1.28
1.8
10
8
2
G
1
Channel-1
Max
"20
62.5
110
40
42
Steady State
N-Channel 1
MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 100% R
APPLICATIONS
D DC/DC Converters
D
S
1
1
1.04
1.14
0.73
7.5
6
− Game Stations
− Video Equipment
Typ
34
70
17
Channel-2
−55 to 150
30
g
Tested
10 secs
Max
35
72
24
2.73
G
3.0
1.9
14
11
2
Channel-2
Vishay Siliconix
Typ
"20
50
40
76
21
Steady State
Schottky
N-Channel 2
Si4310BDY
MOSFET
D
1.33
1.47
0.94
S
9.8
7.8
2
2
Max
48
93
26
www.vishay.com
Schottky Diode
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI4310BDY-E3 Summary of contents

Page 1

... Ordering Information Si4310BDY—E3 Si4310BDY-T1—E3 (with Tape and Reel Top View ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C ...

Page 2

... Si4310BDY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On State Drain Current b b Drain-Source On-State Resistance Drain Source On State Resistance ...

Page 3

... 125_C 75_C − 125_C Si4310BDY Vishay Siliconix Min Typ Max 0.485 0.53 0.42 0.42 0.008 0.100 0.4 6.5 102 CHANNEL-1 Transfer Characteristics 125_C 25_C 0 0.0 0.5 1.0 1.5 2 ...

Page 4

... Si4310BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D −0.0 − ...

Page 5

... Single Pulse 0.01 0 − Drain-to-Source Voltage (V) DS −2 − Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec) Si4310BDY Vishay Siliconix CHANNEL 100 100 Notes Duty Cycle ...

Page 6

... Si4310BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru − Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.015 0.012 0.009 0.006 0.003 0.000 − Drain Current (A) D Gate Charge ...

Page 7

... Safe Operating Area, Junction-to-Case 100 DS(on 0 25_C C Single Pulse 0.01 0 − Drain-to-Source Voltage (V) DS Si4310BDY Vishay Siliconix CHANNEL-2 On-Resistance vs. Gate-to-Source Voltage − Gate-to-Source Voltage (V) GS Single Pulse Power 200 160 120 80 ...

Page 8

... Si4310BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs ...

Page 9

... V − Reverse Voltage (V KA Normalized Thermal Transient Impedance, Junction-to-Ambient −2 − Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec) Si4310BDY Vishay Siliconix SCHOTTKY 24 30 Notes Duty Cycle ...

Page 10

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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