SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4310BDY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
• Manufacturer: Vishay

Specifications of SI4310BDY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 9.8 A @ Channel 2
• Power Dissipation: 1140 mW @ Channel 1 or 1470 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4310BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.0001
0.001
0.01
100
0.1
10
1
0
0.01
0.01
Reverse Current vs. Junction Temperature
0.1
0.1
2
1
2
1
10
10
-4
-4
0.2
0.02
0.1
0.05
25
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Duty Cycle = 0.5
T
J
- Junction Temperature (°C)
50
30 V
10
Single Pulse
-3
75
Single Pulse
10
20 V
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
Normalized Thermal Transient Impedance, Junction-to-Foot
10
125
-2
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
0.1
5
1
10
1
0
-1
T
J
= 150 °C
0.2
V
Forward Voltage Drop
F
- Forward Voltage Drop (V)
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
0.4
t
A
1
1
S09-2436-Rev. B, 16-Nov-09
= P
t
2
Document Number: 73064
T
DM
J
Z
= 25 °C
thJA
thJA
100
t
t
1
2
(t)
0.6
= 92 C/W
6
1
0
0
0
0.8