SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 8
![TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO](/photos/16/9/160916/soic-14_sml.jpg)
SI4310BDY-T1-E3
Manufacturer Part Number
SI4310BDY-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
Manufacturer
Vishay
Datasheet
1.SI4310BDY-T1-E3.pdf
(10 pages)
Specifications of SI4310BDY-T1-E3
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A @ Channel 1 or 9.8 A @ Channel 2
Power Dissipation
1140 mW @ Channel 1 or 1470 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Si4310BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.0001
0.001
0.01
100
0.1
10
1
0
0.01
0.01
Reverse Current vs. Junction Temperature
0.1
0.1
2
1
2
1
10
10
-4
-4
0.2
0.02
0.1
0.05
25
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Duty Cycle = 0.5
T
J
- Junction Temperature (°C)
50
30 V
10
Single Pulse
-3
75
Single Pulse
10
20 V
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
Normalized Thermal Transient Impedance, Junction-to-Foot
10
125
-2
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
0.1
5
1
10
1
0
-1
T
J
= 150 °C
0.2
V
Forward Voltage Drop
F
- Forward Voltage Drop (V)
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
0.4
t
A
1
1
S09-2436-Rev. B, 16-Nov-09
= P
t
2
Document Number: 73064
T
DM
J
Z
= 25 °C
thJA
thJA
100
t
t
1
2
(t)
0.6
= 92 C/W
6
1
0
0
0
0.8