SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4310BDY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
• Manufacturer: Vishay

Specifications of SI4310BDY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 9.8 A @ Channel 2
• Power Dissipation: 1140 mW @ Channel 1 or 1470 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4310BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.015
0.012
0.009
0.006
0.003
0.000
50
40
30
20
10
6
5
4
3
2
1
0
0
0
0
0
V
I
D
DS
= 14 A
On-Resistance vs. Drain Current
V
V
= 15 V
GS
GS
10
5
1
V
= 10 V thru 4 V
= 4.5 V
Q
DS
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
10
20
2
3 V
15
30
3
V
GS
20
= 10 V
40
4
25
50
5
4000
3500
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
0.5
GS
= 14 A
5
= 10 V
V
V
1.0
DS
Transfer Characteristics
GS
0
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
I
D
Capacitance
1.5
25
- Drain Current (A)
C
C
oss
iss
T
S09-2436-Rev. B, 16-Nov-09
C
2.0
15
50
25 °C
= 125 °C
Document Number: 73064
2.5
75
20
100
3.0
- 55 °C
25
125
3.5
150
4.0
30