SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4310BDY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
• Manufacturer: Vishay

Specifications of SI4310BDY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 9.8 A @ Channel 2
• Power Dissipation: 1140 mW @ Channel 1 or 1470 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
SCHOTTKY SPECIFICATIONS T
Parameter
Forward voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
0.020
0.016
0.012
0.008
0.004
0.000
40
35
30
25
20
15
10
5
0
0
0
V
On-Resistance vs. Drain Current
GS
5
1
= 10 V thru 5 V
V
DS
V
Output Characteristics
GS
- Drain-to-Source Voltage (V)
10
= 4.5 V
I
D
- Drain Current (A)
2
4 V
15
3 V
3
V
GS
20
= 10 V
J
Symbol
= 25 °C, unless otherwise noted
4
V
I
C
rm
25
F
T
30
5
V
V
I
R
F
R
Test Conditions
= 3 A, T
= 30 V, T
= 30 V, T
V
V
I
R
R
F
= 3 A
= 30 V
= 15 V
J
2000
1600
1200
J
800
400
= 125 °C
J
40
35
30
25
20
15
10
= 125 °C
= 75 °C
5
0
0
0.0
0
C
rss
0.5
5
1.0
C
V
V
C
oss
DS
GS
Transfer Characteristics
iss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.5
10
Capacitance
Min.
2.0
15
T
25 °C
C
Vishay Siliconix
2.5
= 125 °C
0.485
0.008
Typ.
0.42
102
0.4
0.5
Si4310BDY
3.0
20
www.vishay.com
0.100
Max.
- 55 °C
3.5
0.53
0.42
20
5
25
4.0
Unit
mA
pF
4.5
V
30
3