SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4310BDY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9.8A I(D),SO
• Manufacturer: Vishay

Specifications of SI4310BDY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Channel 1 or 9.8 A @ Channel 2
• Power Dissipation: 1140 mW @ Channel 1 or 1470 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.2
0.1
0.05
0.05
0.02
0.02
Duty Cycle = 0.5
0.2
Single Pulse
0.1
Duty Cycle = 0.5
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
100
0.1
10
1
0.1
10
Limited by R
* V
-2
Safe Operating Area, Junction-to-Case
GS
> minimum V
V
DS
DS(on)
Single Pulse
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
T
Square Wave Pulse Duration (s)
10
C
1
-2
= 25 C
*
10
GS
-1
at which R
10
DS(on)
1
10
is specified
-1
1 ms
10 ms
100 ms
1 s
10 s
DC
100
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
A
1
t
1
= P
Vishay Siliconix
t
2
DM
Si4310BDY
Z
thJA
100
thJA
t
t
1
2
(t)
= 92 C/W
www.vishay.com
6
0
1
0
0
5