IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 9

• Manufacturer Part Number: IGB01N120H2
• Description: IGBT,1200V,1A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB01N120H2

• Transistor Type: IGBT
• Dc Collector Current: 1A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A

Power Semiconductors
Figure 21. Typical turn off behavior, soft
switching
(V
Dynamic test circuit in Figure E)
1000V
800V
600V
400V
200V
GE
0V
=15/0V, R
0.0
0.4
G
t
=220Ω, T
p
,
PULSE WIDTH
0.8
1.2
j
= 150 C,
1.6
2.0
1.0A
0.8A
0.6A
0.4A
0.2A
0.0A
9
IGB01N120H2
Rev. 2.4 Oct. 07