IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 5

• Manufacturer Part Number: IGB01N120H2
• Description: IGBT,1200V,1A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB01N120H2

• Transistor Type: IGBT
• Dc Collector Current: 1A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A

Power Semiconductors
Figure 7. Typical transfer characteristics
(V
Figure 5. Typical output characteristics
(T
5A
4A
3A
2A
1A
0A
5A
4A
3A
2A
1A
0A
CE
3V
0V
j
= 25 C)
= 20V)
V
CE
V
V
,
GE
GE
COLLECTOR
1V
=15V
T
,
12V
10V
j
=+25°C
8V
6V
GATE
5V
T
j
=+150°C
2V
-
EMITTER VOLTAGE
-
EMITTER VOLTAGE
7V
3V
4V
9V
5V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
Figure 6. Typical output characteristics
(T
5A
4A
3A
2A
1A
0A
GE
4V
3V
2V
1V
0V
0V
-50°C
j
= 150 C)
= 15V)
V
CE
V
GE
,
T
1V
COLLECTOR
=15V
j
,
12V
10V
JUNCTION TEMPERATURE
8V
6V
0°C
2V
50°C
-
3V
EMITTER VOLTAGE
IGB01N120H2
4V
100°C
Rev. 2.4 Oct. 07
5V
I
I
C
C
I
C
150°C
=0.5A
=2A
=1A
6V