IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 10
![IGBT,1200V,1A,TO263](/photos/19/8/190876/ge3to26305-40_sml.jpg)
IGB01N120H2
Manufacturer Part Number
IGB01N120H2
Description
IGBT,1200V,1A,TO263
Manufacturer
Infineon Technologies
Datasheet
1.IGB01N120H2.pdf
(12 pages)
Specifications of IGB01N120H2
Transistor Type
IGBT
Dc Collector Current
1A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
28W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-263
Rohs Compliant
Yes
Switching Frequency
HighSpeed2 30-100 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
3.2 A
Ic(max) @ 100°
1.3 A
IGB01N120H2
PG-TO263-3-2
Power Semiconductors
10
Rev. 2.4 Oct. 07