IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet
IGB01N120H2
Specifications of IGB01N120H2
Related parts for IGB01N120H2
IGB01N120H2 Summary of contents
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... Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 2 J-STD-020 and JESD-022 Power Semiconductors 2 for target applications E T Marking off j 0.09mJ 150°C G01H1202 Symbol jmax IGB01N120H2 G PG-TO263-3-2 Package PG-TO-263-3-2 Value Unit 1200 V A 3.2 1.3 3.5 3 -40...+150 245 Rev. 2.4 Oct ...
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... PCB is vertical without blown air. Power Semiconductors Symbol Conditions PG-TO-220-3 Symbol Conditions (one layer thick) copper area for 2 IGB01N120H2 Max. Value Unit 4.5 K/W 40 Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.4 - 2 Rev. 2.4 Oct. 07 ...
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... C j Symbol Conditions Energy losses include “tail” and diode reverse recovery. Symbol Conditions IGB01N120H2 Value Unit min. Typ. max 6 370 - - 0. 0. 0.14 - Value Unit min. Typ. max 8 450 - - 0. 0. 0.2 - Value Unit min. Typ. max 0. 0.044 - Rev. 2.4 Oct. 07 ...
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... C) j Power Semiconductors 10A 0,1A ,01A 10kHz 100kHz 1V Figure 2. Safe operating area ( 125°C 150°C 25°C Figure 4. Collector current as a function of case temperature ( IGB01N120H2 200 s DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125°C ...
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... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors =15V COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGB01N120H2 12V 10V EMITTER VOLTAGE =0.5A C 0°C 50°C 100°C 150°C JUNCTION TEMPERATURE Rev. 2.4 Oct. 07 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V 241 , CE G dynamic test circuit in Fig. 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.03mA 241 , 6 IGB01N120H2 t d(off d(on 100 150 200 R , GATE RESISTOR G = 150 +15V/0V 1A max. typ. ...
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... Fig.E ) 0.06mJ 0.04mJ 0.02mJ 0.00mJ 100°C 150°C 0V/us Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig 241 , 7 IGB01N120H2 and E include losses on ts due to diode recovery off 50 100 150 200 R , GATE RESISTOR G ...
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... C 1000V 800V C iss 600V 400V C oss 200V C rss 0V 20V 30V Figure 20. Typical turn off behavior, hard switching (V =15/0V Dynamic test circuit in Figure E) 8 IGB01N120H2 U =240V CE U =960V CE 5nC 10nC Q , GATE CHARGE GE 1.0A 0.8A 0.6A 0.4A 0.2A 0.0A 0.0 0.2 0.4 0.6 ...
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... PULSE WIDTH p Figure 21. Typical turn off behavior, soft switching (V =15/0V, R =220Ω 150 Dynamic test circuit in Figure E) Power Semiconductors 1.0A 0.8A 0.6A 0.4A 0.2A 0.0A 1.6 2.0 9 IGB01N120H2 Rev. 2.4 Oct. 07 ...
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... Power Semiconductors PG-TO263-3-2 10 IGB01N120H2 Rev. 2.4 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IGB01N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ZVT switching) ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGB01N120H2 12 Rev. 2.4 Oct. 07 ...