IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 11

• Manufacturer Part Number: IGB01N120H2
• Description: IGBT,1200V,1A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB01N120H2

• Transistor Type: IGBT
• Dc Collector Current: 1A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
11
i,v
p(t)
V
DC
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L = 180nH,
Stray capacitor C = 40pF,
Relief capacitor C
ZVT switching)
r
1
di /dt
1
r
F
I
1
r r m
(Diode)
R
DUT
½ L
G
öö
½ L
IGB01N120H2
r
2
2
r
t
2
S
Q
Q =Q
t =t
r
r r
S
r r
= 1nF (only for
t
Rev. 2.4 Oct. 07
r r
S
Q
S
+
(IGBT)
90% I
F
DUT
+
t
L
F
Q
t
F
F
r r m
r
di
C
10% I
n
n
r r
r
n
/dt
r r m
C
r
V
T
t
R
C