IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 7

• Manufacturer Part Number: IGB01N120H2
• Description: IGBT,1200V,1A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB01N120H2

• Transistor Type: IGBT
• Dc Collector Current: 1A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A

Power Semiconductors
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
CE
GE
0.25mJ
0.20mJ
0.15mJ
0.10mJ
0.05mJ
0.00mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
= 800V, V
= +15V/0V, I
0A
1
due to diode recovery.
T
E
) E
1
due to diode recovery.
-40°C
) E
off
j
I
,
C
on
JUNCTION TEMPERATURE
,
on
and E
COLLECTOR CURRENT
GE
and E
C
= +15V/0V, R
j
1A
CE
= 150 C,
= 1A, R
ts
ts
= 800V,
include losses
25°C
include losses
G
2A
= 241 ,
100°C
G
= 241 ,
150°C
3A
E
E
E
E
off
E
on
ts
on
ts
1
1
1
1
7
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
CE
0.06mJ
0.04mJ
0.02mJ
0.00mJ
0.25mJ
0.20mJ
0.15mJ
0.10mJ
0.05mJ
= 800V, V
0V/us
50
1
due to diode recovery.
dv/dt, VOLTAGE SLOPE
) E
I
C
on
R
=0.3A, T
E
GE
off
and E
G
1000V/us
100
,
= +15V/0V, I
j
I
GATE RESISTOR
C
= 150 C,
=0.3A, T
J
ts
=150°C
I
C
include losses
=1A, T
IGB01N120H2
J
=25°C
150
J
=150°C
2000V/us
C
I
C
=1A, T
= 1A,
Rev. 2.4 Oct. 07
200
J
=25°C
3000V/us
E
E
ts
1
on
1