IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 4

• Manufacturer Part Number: IGB01N120H2
• Description: IGBT,1200V,1A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB01N120H2

• Transistor Type: IGBT
• Dc Collector Current: 1A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A

Power Semiconductors
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
GE
5A
4A
3A
2A
1A
0A
30W
25W
20W
15W
10W
j
j
5W
0W
10Hz
= +15V/0V, R
150 C, D = 0.5, V
25°C
150 C)
f,
100Hz
T
50°C
SWITCHING FREQUENCY
C
T
I
T
,
C
c
C
CASE TEMPERATURE
=110°C
=80°C
G
75°C
= 241 )
1kHz
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
150°C
4
0,1A
,01A
Figure 4. Collector current as a function of
case temperature
(V
10A
1A
4A
3A
2A
1A
0A
GE
1V
25°C
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
50°C
T
C
10V
j
,
C
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
-
100V
EMITTER VOLTAGE
IGB01N120H2
100°C
j
150 C)
Rev. 2.4 Oct. 07
125°C
1000V
t
p
=1 s
20 s
50 s
DC
200 s
5 s
2 s
150°C