IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 6

• Manufacturer Part Number: IGB01N120H2
• Description: IGBT,1200V,1A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB01N120H2

• Transistor Type: IGBT
• Dc Collector Current: 1A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A

Power Semiconductors
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E)
CE
GE
1000ns
100ns
100ns
10ns
10ns
= 800V, V
= +15V/0V, I
0°C
0A
T
j
I
,
C
JUNCTION TEMPERATURE
,
t
t
d(off)
t
COLLECTOR CURRENT
GE
d(on)
t
f
r
50°C
C
= +15V/0V, R
j
CE
= 150 C,
= 1A, R
1A
= 800V,
t
t
d(off)
f
t
d(on)
G
100°C
= 241 ,
t
r
G
2A
= 241 ,
150°C
6
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
C
CE
100ns
6V
5V
4V
3V
2V
1V
0V
10ns
= 0.03mA)
-50°C
1ns
= 800V, V
50
T
t
j
f
,
t
JUNCTION TEMPERATURE
t
0°C
d(off)
d(on)
t
R
r
GE
100
G
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
50°C
IGB01N120H2
150
C
100°C
= 1A,
Rev. 2.4 Oct. 07
200
max.
min.
150°C
typ.