FGH40N60SMD Fairchild Semiconductor, FGH40N60SMD Datasheet - Page 7

• Manufacturer Part Number: FGH40N60SMD
• Description: IGBT 600V 40A TO-247-3
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: +/- 400 nA
• Power Dissipation: 349 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMD Rev. A
Typical Performance Characteristics
Figure 19. Current Derating
Figure 21. Forward Characteristics
Figure 23. Stored Charge
700
600
500
400
300
200
100
100
90
80
70
60
50
40
30
20
10
10
0
1
0
25
0
0
T
T
Collector-EmitterCase Temperature, T
C
C
= 25
= 175
5
0.5
50
o
C
di/dt = 200A/
o
10
C
Forwad Current, I
T
Forward Voltage, V
C
1.0
75
15
= 175
o
m
20
C
s
100
1.5
25
di/dt = 100A/
Common Emitter
V
F
125
GE
2.0
30
[A]
T
F
C
[V]
= 15V
T
T
= 25
C
C
= 25
= 175
35
o
150
C
2.5
o
m
C
C
o
s
C
40
[
o
C]
175
3.0
45
7
1000
1E-3
0.01
120
110
100
Figure 22. Reverse Current
100
200
150
100
Figure 20. Load Current Vs. Frequency
0.1
90
80
70
60
50
40
30
20
10
10
50
0
1
Figure 24. Reverse Recovery Time
0
1k
0
0
T
T
C
C
= 25
= 175
5
100
o
C
o
10
C
Switching Frequency, f [Hz]
di/dt = 200A/
Tc = 100
Forward Current, I
10k
200
15
Square Wave
T
V
o
J
GE
C
T
T
V
< 175
20
C
C
= 15/0V, R
T
R
m
= 100
= 25
300
C
s
[V]
= 175
Tc = 75
o
C, D = 0.5, V
25
o
C
o
C
o
di/dt = 100A/
C
100k
G
F
400
30
o
[A]
= 6
C
W
CE
35
500
= 400V
m
s
40
www.fairchildsemi.com
600
1M
45