FGH40N60SMD Fairchild Semiconductor, FGH40N60SMD Datasheet - Page 5

• Manufacturer Part Number: FGH40N60SMD
• Description: IGBT 600V 40A TO-247-3
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: +/- 400 nA
• Power Dissipation: 349 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
4000
3000
2000
1000
0.01
300
100
0.1
10
20
16
12
0
1
8
4
0
0.1
4
1
*Notes:
I
C
1. T
2. T
3. Single Pulse
= 20A
40A
Collector-Emitter Voltage, V
C
J
Collector-Emitter Voltage, V
= 175
= 25
Gate-Emitter Voltage, V
8
o
o
C
C
10
1
80A
12
DC
10 ms
Common Emitter
V
T
GE
C
C
C
C
100
Common Emitter
T
= 25
ies
oes
res
C
= 0V, f = 1MHz
1ms
GE
CE
= 25
o
16
CE
C
[V]
GE
[V]
100
o
10
[V]
C
m
s
10
m
s
1000
30
20
5
Figure 8. Saturation Voltage vs. V
Figure 10. Gate charge Characteristics
100
20
16
12
10
15
12
Figure 12. Turn-on Characteristics vs.
8
4
0
1
9
6
3
0
4
0
0
I
Common Emitter
T
C
C
= 20A
= 25
o
10
C
Gate-Emitter Voltage, V
8
40A
Gate Resistance, R
Gate Resistance
Gate Charge, Q
40
t
t
r
d(on)
80A
20
12
V
CC
Common Emitter
V
I
T
T
C
CC
C
C
= 40A
= 200V
= 25
= 175
30
= 400V, V
g
Common Emitter
T
[nC]
80
o
G
C
C
o
[
= 175
GE
C
W
16
]
[V]
GE
40
o
C
300V
= 15V
GE
400V
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50
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