FGH40N60SMD Fairchild Semiconductor, FGH40N60SMD Datasheet - Page 4

• Manufacturer Part Number: FGH40N60SMD
• Description: IGBT 600V 40A TO-247-3
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: +/- 400 nA
• Power Dissipation: 349 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
120
100
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
25
0
0
T
C
Common Emitter
V
T
T
Common Emitter
V
Collector-EmitterCase Temperature, T
Characteristics
Temperature at Variant Current Level
GE
C
C
= 25
GE
= 25
= 175
= 15V
= 15V
50
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
C
o
C
o
C
1
75
2
15V
20V
100
2
12V
I
C
125
4
80A
40A
= 20A
CE
CE
3
V
[V]
[V]
150
GE
C
= 8V
[
10V
o
C]
175
6
4
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
120
120
100
Figure 4. Transfer Characteristics
80
60
40
20
90
60
30
20
16
12
0
0
8
4
0
0
0
4
T
Common Emitter
V
T
T
C
CE
C
C
I
C
= 25
= 175
= 175
= 20A
= 20V
40A
Collector-Emitter Voltage, V
o
2
C
o
o
C
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
8
2
4
80A
15V
20V
12
6
Common Emitter
T
4
8
C
GE
12V
GE
= -40
16
CE
[V]
[V]
V
[V]
o
10
C
GE
= 8V
GE
10V
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12
20
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