FGH40N60SMD Fairchild Semiconductor, FGH40N60SMD Datasheet - Page 6

• Manufacturer Part Number: FGH40N60SMD
• Description: IGBT 600V 40A TO-247-3
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: +/- 400 nA
• Power Dissipation: 349 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMD Rev. A
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs.
1000
1000
100
100
0.1
10
10
1
6
1
1
20
20
0
Collector Current
Gate Resistance
Collector Current
30
30
10
t
d(off)
t
Gate Resistance, R
f
Collector Current, I
E
Collector Current, I
on
40
40
20
E
off
50
50
Common Emitter
V
I
T
T
C
C
C
CC
Common Emitter
V
T
T
30
= 40A
GE
C
C
= 25
= 175
Common Emitter
V
T
T
G
= 400V, V
C
C
C
= 25
= 175
GE
t
60
60
t
d(off)
C
f
[
= 15V, R
[A]
= 25
= 175
W
o
[A]
= 15V, R
C
o
]
o
C
C
o
o
C
C
o
40
C
GE
G
70
70
= 6
G
= 15V
= 6
W
W
80
80
50
6
1000
200
100
100
Figure 14. Turn-on Characteristics vs.
Figure 16. Switching Loss vs.
0.1
10
10
Figure 18. Turn off Switching
1
1
5
1
20
0
1
Common Emitter
V
T
T
GE
C
C
= 25
= 175
= 15V, R
30
Collector-Emitter Voltage, V
10
o
C
o
C
E
Collector Current, I
Gate Resistance
Collector Current
E
off
Gate Resistance, R
on
SOA Characteristics
Safe Operating Area
V
G
GE
10
40
= 6
= 15V, T
W
20
50
C
Common Emitter
V
I
T
T
C
= 175
C
C
CC
= 40A
30
= 25
= 175
= 400V, V
C
100
o
60
G
C
[A]
o
C
o
[
t
W
t
C
d(on)
r
]
CE
40
GE
[V]
70
= 15V
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1000
50
80