FDB2532_F085 Fairchild Semiconductor, FDB2532_F085 Datasheet - Page 5

• Manufacturer Part Number: FDB2532_F085
• Description: MOSFET N-CH 150V 79A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB2532_F085

• Input Capacitance (ciss) @ Vds: 5870pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 79A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
1000
Figure 13. Capacitance vs Drain to Source
100
50
1.4
1.2
1.0
0.8
0.6
0.4
0.1
-80
C
V
OSS
GS
C
RSS
= 0V, f = 1MHz
≅ C
-40
Junction Temperature
= C
V
DS
DS
T
J
GD
+ C
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
GD
0
1
Voltage
40
80
V
C
GS
T
ISS
10
A
= V
= C
= 25°C unless otherwise noted
120
DS
GS
, I
o
C)
+ C
D
= 250μA
GD
160
200
150
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 75V
= 250μA
-40
20
T
J
Gate Currents
, JUNCTION TEMPERATURE (
Q
0
g
, GATE CHARGE (nC)
40
40
WAVEFORMS IN
DESCENDING ORDER:
80
60
I
I
D
D
= 33A
= 16A
120
o
C)
80
FDB2532_F085 Rev. A
160
200
100