FDB2532_F085 Fairchild Semiconductor, FDB2532_F085 Datasheet
FDB2532_F085
Specifications of FDB2532_F085
Related parts for FDB2532_F085
FDB2532_F085 Summary of contents
Page 1
... Automotive Load Control • Electronic Valve Train Systems DRAIN (FLANGE 25°C unless otherwise noted C Parameter 10V 10V 10V C/W) θ copper pad area certification. September Ratings Units 150 V ± Figure 4 A 400 mJ 310 -55 to 175 C o 0.48 C C/W FDB2532_F085 Rev ...
Page 2
... 33A 16A 33A, dI /dt= 100A/μ 33A, dI /dt= 100A/μ Tape Width Quantity 24mm 800 units Min Typ Max Units 150 - - μ 250 ±100 - - 0.014 0.016 - 0.016 0.024 Ω - 0.040 0.048 - 5870 - pF - 615 - pF - 135 - 107 1. 1 105 327 nC FDB2532_F085 Rev. A ...
Page 3
... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK θJC θ 10 FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB2532_F085 Rev. A 175 ...
Page 4
... STARTING T = 150 C J )/(1.3*RATED DSS DD *R)/(1.3*RATED +1] AS DSS DD 0.01 0 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.0 2.0 3.0 4.0 5 DRAIN TO SOURCE VOLTAGE ( 10V, I =33A 120 160 JUNCTION TEMPERATURE ( C) J FDB2532_F085 Rev 6.0 200 ...
Page 5
... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS 150 Figure 14. Gate Charge Waveforms for Constant I = 250μ 120 160 JUNCTION TEMPERATURE ( 75V WAVEFORMS IN DESCENDING ORDER 33A 16A GATE CHARGE (nC) g Gate Currents FDB2532_F085 Rev. A 200 100 ...
Page 6
... Figure 19. Switching Time Test Circuit ©2010 Fairchild Semiconductor Corporation DUT 0.01Ω Figure 16. Unclamped Energy Waveforms DUT g(TH g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT 10V GS Q gs2 OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB2532_F085 Rev 90% ...
Page 7
... C/W) θ never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ.2 θ 26.51+ 128/(1.69+Area) EQ.3 θJA 1 (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB2532_F085 Rev ...
Page 8
... Fairchild Semiconductor Corporation DPLCAP RSLC2 RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB2532_F085 Rev ...
Page 9
... RSLC2 - RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 ISCL DBREAK 50 11 DBODY 16 MWEAK EBREAK MMED + 17 18 LSOURCE - SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB2532_F085 Rev ...
Page 10
... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDB2532_F085 Rev. A ...
Page 11
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower¥ F-PFS¥ Auto-SPM¥ FRFET Build it Now¥ Global Power Resource CorePLUS¥ ...