FDB2532_F085 Fairchild Semiconductor, FDB2532_F085 Datasheet - Page 3

• Manufacturer Part Number: FDB2532_F085
• Description: MOSFET N-CH 150V 79A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB2532_F085

• Input Capacitance (ciss) @ Vds: 5870pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 79A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
2000
1000
0
100
50
0
0.01
2.0
1.0
0.1
10
10
-5
V
GS
-5
25
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
= 10V
Ambient Temperature
T
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
SINGLE PULSE
10
75
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
-4
100
T
A
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
150
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
125
100
75
50
25
0
25
V
GS
= 10V
50
10
10-1
Case Temperature
-1
T
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE (
75
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
100
DM
C
I = I
= 25
x Z
25
P
DM
10
10
θJC
o
C
0
1
0
/t
o
x R
125
2
C DERATE PEAK
175 - T
θJC
t
1
150
o
C)
t
2
+ T
C
C
150
FDB2532_F085 Rev. A
10
10
1
1
175