FDB2532_F085 Fairchild Semiconductor, FDB2532_F085 Datasheet - Page 10

• Manufacturer Part Number: FDB2532_F085
• Description: MOSFET N-CH 150V 79A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB2532_F085

• Input Capacitance (ciss) @ Vds: 5870pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 79A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
SPICE Thermal Model
REV 26 February 2002
FDB2532
CTHERM1 TH 6 7.5e-3
CTHERM2 6 5 8.0e-3
CTHERM3 5 4 9.0e-3
CTHERM4 4 3 2.4e-2
CTHERM5 3 2 3.4e-2
CTHERM6 2 TL 6.5e-2
RTHERM1 TH 6 3.1e-4
RTHERM2 6 5 2.5e-3
RTHERM3 5 4 2.0e-2
RTHERM4 4 3 8.0e-2
RTHERM5 3 2 1.2e-1
RTHERM6 2 TL 1.3e-1
SABER Thermal Model
SABER thermal model FDB2532
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =7.5e-3
ctherm.ctherm2 6 5 =8.0e-3
ctherm.ctherm3 5 4 =9.0e-3
ctherm.ctherm4 4 3 =2.4e-2
ctherm.ctherm5 3 2 =3.4e-2
ctherm.ctherm6 2 tl =6.5e-2
rrtherm.rtherm1 th 6 =3.1e-4
rtherm.rtherm2 6 5 =2.5e-3
rtherm.rtherm3 5 4 =2.0e-2
rtherm.rtherm4 4 3 =8.0e-2
rtherm.rtherm5 3 2 =1.2e-1
rtherm.rtherm6 2 tl =1.3e-1
}
RTHERM5
RTHERM1
RTHERM2
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM6
CTHERM1
CTHERM3
CTHERM4
FDB2532_F085 Rev. A