FDB2532_F085 Fairchild Semiconductor, FDB2532_F085 Datasheet - Page 2

• Manufacturer Part Number: FDB2532_F085
• Description: MOSFET N-CH 150V 79A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB2532_F085

• Input Capacitance (ciss) @ Vds: 5870pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 79A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDB2532
J
= 25°C, L = 0.5 mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 40A.
FDB2532_F085
Parameter
Device
T
C
= 25°C unless otherwise noted
(V
GS
TO-263AB
Package
= 10V)
I
V
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
C
DS
GS
GS
GS
DS
GS
GS
DD
GS
= 33A, V
= 250μA, V
= 16A, V
= 33A, V
= 175
= 33A
= 16A
= 33A, dI
= 33A, dI
= 0V
= ±20V
= 0V to 10V
= 0V to 2V
= 120V
= V
= 25V, V
= 75V, I
= 10V, R
Test Conditions
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
GS
= 33A
= 10V
= 6V,
= 10V,
= 250μA
Reel Size
/dt= 100A/μs
/dt= 100A/μs
330mm
= 0V,
= 0V
= 3.6Ω
T
V
I
I
D
g
C
DD
= 1.0mA
= 33A
= 150
= 75V
o
C
Tape Width
Min
150
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24mm
0.014
0.016
0.040
5870
615
135
Typ
82
11
23
13
19
16
30
39
17
-
-
-
-
-
-
-
-
-
-
-
0.016
0.024
0.048
±100
Max
1.25
250
107
105
327
1.0
14
69
84
1
4
-
-
-
-
-
-
-
-
-
-
-
Quantity
800 units
FDB2532_F085 Rev. A
Units
μA
nA
pF
pF
pF
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
V
V