FDD86250 Fairchild Semiconductor, FDD86250 Datasheet - Page 5

• Manufacturer Part Number: FDD86250
• Description: MOSFET N-CH 150V 8A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of FDD86250

• Input Capacitance (ciss) @ Vds: 2110pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 50 A
• Power Dissipation: 132 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Typical Characteristics
0.005
0.1
2
1
10
-5
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Case Transient Thermal Response Curve
10
T
-4
J
= 25 °C unless otherwise noted
SINGLE PULSE
R
θ
JC
= 0.94
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-3
5
10
-2
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
10
P
θJC
-1
DM
1
/t
x R
2
θJc
t
1
+ T
t
2
C
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