FDD86250 Fairchild Semiconductor, FDD86250 Datasheet
FDD86250
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FDD86250 Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86250 FDD86250 ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 6.5 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3: Starting 1.0 mH ©2010 Fairchild Semiconductor Corporation FDD86250 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...
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... JUNCTION TEMPERATURE ( T J Figure 3. Normalized On- Resistance vs Junction Temperature 40 PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDD86250 Rev °C unless otherwise noted 4 μ 100 125 150 0. - 0.001 5 6 ...
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... Switching Capability 50 10 THIS AREA IS LIMITED BY r DS(on) 1 SINGLE PULSE T = MAX RATED 0.94 C/W θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward BiasSafe Operating Area ©2010 Fairchild Semiconductor Corporation FDD86250 Rev °C unless otherwise noted J 4000 = 1000 100 V = 100 100 125 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.005 - Figure 13. Junction-to-Case Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDD86250 Rev °C unless otherwise noted J SINGLE PULSE 0.94 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...