FDD86250 Fairchild Semiconductor, FDD86250 Datasheet - Page 3

• Manufacturer Part Number: FDD86250
• Description: MOSFET N-CH 150V 8A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of FDD86250

• Input Capacitance (ciss) @ Vds: 2110pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 50 A
• Power Dissipation: 132 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Typical Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
40
30
20
10
Figure 3. Normalized On- Resistance
0
0
Figure 1.
-75
2
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
vs Junction Temperature
= 8 A
= 5 V
= 10 V
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
1
T
V
-25
DS
GS
On-Region Characteristics
J
V
GS
,
3
GS
V
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
GS
DRAIN TO SOURCE VOLTAGE (V)
= 5.5 V
= 6 V
= 10 V
0
T
J
2
= 150
25
μ
s
4
o
C
50
T
J
3
μ
= 25 °C unless otherwise noted
s
75
T
J
= -55
5
o
100 125 150
C )
T
V
4
J
GS
V
= 25
o
GS
C
= 4.5 V
= 5 V
o
C
6
5
3
0.001
0.01
80
60
40
20
0.1
4
3
2
1
0
40
10
Figure 2.
Figure 4.
0
1
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
= 0 V
SD
0.2
T
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
J
V
On-Resistance vs Gate to
V
= 150
GS
GS
10
I
Source Voltage
D
Source to Drain Diode
,
,
= 4.5 V
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
0.4
D
o
6
C
= 8 A
T
T
J
J
μ
= 125
= 25
0.6
s
20
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
o
V
C
C
GS
T
0.8
= 6 V
J
8
= -55
T
V
J
GS
30
= 25
= 5 V
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o
V
V
C
1.0
GS
GS
o
C
= 5.5 V
= 10 V
μ
s
1.2
40
10