FDD86250 Fairchild Semiconductor, FDD86250 Datasheet - Page 2

• Manufacturer Part Number: FDD86250
• Description: MOSFET N-CH 150V 8A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of FDD86250

• Input Capacitance (ciss) @ Vds: 2110pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 50 A
• Power Dissipation: 132 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Notes:
1: R
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
R
Symbol
θJA
θJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
°
C, L = 1.0 mH, I
AS
= 19 A, V
Parameter
θJA
is determined by the user’s board design.
a) 40 °C/W when mounted on a
DD
1 in
= 135 V, V
2
pad of 2 oz copper
T
J
= 25 °C unless otherwise noted
GS
= 10 V.
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 8 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
2
= 75 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= 10 V, I
= 75 V, V
= 0 V, I
= 0 V, I
= 120 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= ±20 V, V
DS
Test Conditions
, I
D
S
S
D
D
D
D
D
= 8 A
= 2.6 A
= 6.5 A
GS
GEN
= 250 μA
GS
= 8 A,
= 8 A
= 8 A, T
= 8 A
GS
DS
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 8 A
J
= 75 V,
= 125 °C
(Note 2)
(Note 2)
b) 96 °C/W when mounted on
a minimum pad
Min
150
2.0
1585
12.8
18.4
21.4
35.8
11.2
0.78
0.73
167
104
3.7
6.7
4.7
Typ
106
2.9
-10
0.6
20
23
28
71
4
7
±100
2110
Max
225
113
166
4.0
1.3
1.2
20
10
32
10
33
18
22
31
45
15
www.fairchildsemi.com
1
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
Ω
V
V
S
V