FDD86250 Fairchild Semiconductor, FDD86250 Datasheet - Page 2
![MOSFET N-CH 150V 8A DPAK](/photos/16/7/160789/d2pak-3_sml.jpg)
FDD86250
Manufacturer Part Number
FDD86250
Description
MOSFET N-CH 150V 8A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD86250.pdf
(6 pages)
Specifications of FDD86250
Input Capacitance (ciss) @ Vds
2110pF @ 75V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
31 mOhms
Forward Transconductance Gfs (max / Min)
28 S
Drain-source Breakdown Voltage
150 V
Continuous Drain Current
50 A
Power Dissipation
132 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD86250
Manufacturer:
FSC
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Notes:
1: R
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
R
Symbol
θJA
θJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
°
C, L = 1.0 mH, I
AS
= 19 A, V
Parameter
θJA
is determined by the user’s board design.
a) 40 °C/W when mounted on a
DD
1 in
= 135 V, V
2
pad of 2 oz copper
T
J
= 25 °C unless otherwise noted
GS
= 10 V.
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 8 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
2
= 75 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= 10 V, I
= 75 V, V
= 0 V, I
= 0 V, I
= 120 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= ±20 V, V
DS
Test Conditions
, I
D
S
S
D
D
D
D
D
= 8 A
= 2.6 A
= 6.5 A
GS
GEN
= 250 μA
GS
= 8 A,
= 8 A
= 8 A, T
= 8 A
GS
DS
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 8 A
J
= 75 V,
= 125 °C
(Note 2)
(Note 2)
b) 96 °C/W when mounted on
a minimum pad
Min
150
2.0
1585
12.8
18.4
21.4
35.8
11.2
0.78
0.73
167
104
3.7
6.7
4.7
Typ
106
2.9
-10
0.6
20
23
28
71
4
7
±100
2110
Max
225
113
166
4.0
1.3
1.2
20
10
32
10
33
18
22
31
45
15
www.fairchildsemi.com
1
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
Ω
V
V
S
V