BLL6H0514L-130,112 NXP Semiconductors, BLL6H0514L-130,112 Datasheet - Page 8

• Manufacturer Part Number: BLL6H0514L-130,112
• Description: TRANSISTOR LDMOS DRIVER SOT1135A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514L-130,112

• Package / Case: SOT1135A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 18A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 130W
• Forward Transconductance Gfs (max / Min): 1578 S / 806 S
• Resistance Drain-source Rds (on): 200 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 18 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 100V
• Output Power (max): 130W(Min)
• Power Gain (typ)@vds: 17@50VdB
• Frequency (min): 960MHz
• Frequency (max): 1.4GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 1.578(Max)S
• Drain Source Resistance (max): 275@8.5Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
9. Package outline
Fig 8.
BLL6H0514L-130_0514LS-130
Product data sheet
Flanged ceramic package; 2 mounting holes; 2 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1135A
Outline
version
Package outline SOT1135A
(1)
max
nom
max
nom
min
min
0.183
0.148
H
4.65
3.76
A
U
A
A
2
0.207
0.197
5.26
5.00
b
0.007
0.004
0.18
0.10
IEC
c
9.65
9.40
0.38
0.37
D
9.65
9.40
0.38
0.37
D
1
JEDEC
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
E
U
D
D
q
1
2
b
1
1
9.65
9.40
0.38
0.37
E
References
1
Rev. 2 — 13 September 2010
0
1.14
0.89
0.045
0.035
F
w
19.94
18.92
0.785
0.745
2
JEITA
H
scale
C
5
0.130
0.115
3.30
2.92
p
3
0.067
0.057
1.70
1.45
Q
B
C
F
p
10 mm
w
15.24
0.6
1
q
BLL6H0514L(S)-130
A
20.45
20.19
0.805
0.795
U
1
B
9.91
9.65
0.39
0.38
U
2
0.25
0.01
w
European
projection
E
1
1
0.51
0.02
LDMOS driver transistor
w
2
Q
c
© NXP B.V. 2010. All rights reserved.
E
Issue date
09-10-12
09-12-14
sot1135a_po
SOT1135A
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