BLL6H0514L-130,112 NXP Semiconductors, BLL6H0514L-130,112 Datasheet - Page 2

• Manufacturer Part Number: BLL6H0514L-130,112
• Description: TRANSISTOR LDMOS DRIVER SOT1135A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514L-130,112

• Package / Case: SOT1135A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 18A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 130W
• Forward Transconductance Gfs (max / Min): 1578 S / 806 S
• Resistance Drain-source Rds (on): 200 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 18 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 100V
• Output Power (max): 130W(Min)
• Power Gain (typ)@vds: 17@50VdB
• Frequency (min): 960MHz
• Frequency (max): 1.4GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 1.578(Max)S
• Drain Source Resistance (max): 275@8.5Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLL6H0514L-130_0514LS-130
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLL6H0514L-130 (SOT1135A)
1
2
3
BLL6H0514LS-130 (SOT1135B)
1
2
3
Type number
BLL6H0514L-130
BLL6H0514LS-130
Symbol
V
I
T
V
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 2 — 13 September 2010
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Conditions
[1]
[1]
BLL6H0514L(S)-130
Simplified outline
1
2
1
2
LDMOS driver transistor
3
3
Graphic symbol
-
Min
-
0.5
-
65
© NXP B.V. 2010. All rights reserved.
2
2
Max
100
+13
18
+150
200
sym112
sym112
SOT1135A
Version
SOT1135B
1
3
1
3
2 of 13
Unit
V
V
A
C
C