BLL6H0514L-130,112 NXP Semiconductors, BLL6H0514L-130,112 Datasheet - Page 6

• Manufacturer Part Number: BLL6H0514L-130,112
• Description: TRANSISTOR LDMOS DRIVER SOT1135A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514L-130,112

• Package / Case: SOT1135A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 18A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 130W
• Forward Transconductance Gfs (max / Min): 1578 S / 806 S
• Resistance Drain-source Rds (on): 200 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 18 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 100V
• Output Power (max): 130W(Min)
• Power Gain (typ)@vds: 17@50VdB
• Frequency (min): 960MHz
• Frequency (max): 1.4GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 1.578(Max)S
• Drain Source Resistance (max): 275@8.5Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Test information
BLL6H0514L-130_0514LS-130
Product data sheet
Fig 6.
Fig 7.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
C1
C6
V
Load power as a function of input power; typical values
Printed-Circuit Board (PCB) material: Duroid 6006 with 
See
Component layout
DS
C2
= 50 V; I
Table 9
C3
All information provided in this document is subject to legal disclaimers.
C4
for list of components.
Dq
Rev. 2 — 13 September 2010
(W)
P
= 50 mA; t
C5
160
120
L
80
40
0
0
p
= 300 s;  = 10 %.
1
R1
2
(1)
(2)
(3)
BLL6H0514L(S)-130
3
r
= 6.15 and thickness = 0.64 mm.
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P
i
(W)
C8
4
LDMOS driver transistor
R2
C13
C9
© NXP B.V. 2010. All rights reserved.
C10
C11
C12
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C7
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