BLL6H0514L-130,112 NXP Semiconductors, BLL6H0514L-130,112 Datasheet - Page 5

• Manufacturer Part Number: BLL6H0514L-130,112
• Description: TRANSISTOR LDMOS DRIVER SOT1135A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514L-130,112

• Package / Case: SOT1135A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 18A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 130W
• Forward Transconductance Gfs (max / Min): 1578 S / 806 S
• Resistance Drain-source Rds (on): 200 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 18 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 100V
• Output Power (max): 130W(Min)
• Power Gain (typ)@vds: 17@50VdB
• Frequency (min): 960MHz
• Frequency (max): 1.4GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 1.578(Max)S
• Drain Source Resistance (max): 275@8.5Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLL6H0514L-130_0514LS-130
Product data sheet
Fig 2.
Fig 4.
(dB)
(dB)
G
G
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
p
p
20
16
12
20
16
12
8
4
0
8
4
0
1.15
V
Power gain and drain efficiency as function of
frequency; typical values
0
V
Power gain as a function of load power; typical
values
DS
DS
= 50 V; I
= 50 V; I
7.2 Performance curves
40
Dq
Dq
1.25
= 50 mA; t
= 50 mA; t
80
G
η
p
p
D
p
= 300 s;  = 10 %.
= 300 s;  = 10 %.
1.35
(1)
(2)
(3)
120
f (GHz)
All information provided in this document is subject to legal disclaimers.
001aam262
001aam264
P
L
(W)
Rev. 2 — 13 September 2010
1.45
160
60
50
40
30
20
10
(%)
η
D
Fig 3.
Fig 5.
RL
(dB)
(%)
η
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
D
in
20
16
12
60
50
40
30
20
10
8
4
0
1.15
0
V
Input return loss as a function of frequency;
typical values
V
Drain efficiency as function of load power;
typical values
DS
DS
= 50 V; I
= 50 V; I
BLL6H0514L(S)-130
40
Dq
Dq
1.25
= 50 mA; t
= 50 mA; t
80
(1)
(2)
(3)
LDMOS driver transistor
p
p
= 300 s;  = 10 %.
= 300 s;  = 10 %.
1.35
120
© NXP B.V. 2010. All rights reserved.
f (GHz)
001aam263
001aam265
P
L
(W)
1.45
160
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