BLL6H0514L-130 NXP Semiconductors, BLL6H0514L-130 Datasheet

130 W LDMOS transistor intended for pulsed applications in the 0

BLL6H0514L-130

Manufacturer Part Number
BLL6H0514L-130
Description
130 W LDMOS transistor intended for pulsed applications in the 0
Manufacturer
NXP Semiconductors
Datasheet

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BLL6H0514L-130
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1. Product profile
Table 1.
Typical RF performance at T
Mode of operation
pulsed RF
Application information
1.1 General description
1.2 Features and benefits
1.3 Applications
f
(MHz)
960 to 1215
1200 to 1400
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
case
BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 2 — 13 September 2010
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
= 25
C; I
t
(s)
128
300
p
Dq
= 50 mA; in a class-AB application circuit.
(%)
10
10
V
(V)
50
50
DS
P
(W)
130
130
L
G
(dB)
19
17
p
RL
(dB)
10
10
in
54
50
(%)
D
P
(dB)
0
0
droop(pulse)
Product data sheet
t
(ns)
15
15
r
t
(ns)
8
8
f

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BLL6H0514L-130 Summary of contents

Page 1

... BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 — 13 September 2010 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance case Mode of operation f (MHz) pulsed RF 960 to 1215 1200 to 1400 1.2 Features and benefits  ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLL6H0514L-130 (SOT1135A BLL6H0514LS-130 (SOT1135B [1] Connected to flange. 3. Ordering information Table 3. Type number BLL6H0514L-130 BLL6H0514LS-130 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLL6H0514L-130_0514LS-130 ...

Page 3

...  droop(pulse BLL6H0514L-130_0514LS-130 Product data sheet Thermal characteristics Parameter transient thermal impedance from junction to case DC characteristics C; per section unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current ...

Page 4

... NXP Semiconductors 6.1 Ruggedness in class-AB operation The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V  Application information 7.1 Impedance information Table 8. f MHz 1200 1300 1400 Fig 1. BLL6H0514L-130_0514LS-130 Product data sheet = 50 V ...

Page 5

... mA ( 1.2 GHz ( 1.3 GHz ( 1.4 GHz Fig 4. Power gain as a function of load power; typical values BLL6H0514L-130_0514LS-130 Product data sheet 001aam262 60 η (%) η 1.35 1.45 f (GHz) = 300 s;  Fig 3. ...

Page 6

... NXP Semiconductors ( 1.2 GHz ( 1.3 GHz ( 1.4 GHz Fig 6. 8. Test information Fig 7. BLL6H0514L-130_0514LS-130 Product data sheet 160 P L (W) 120 300 s;  mA Load power as a function of input power; typical values Printed-Circuit Board (PCB) material: Duroid 6006 with  ...

Page 7

... American Technical Ceramics type 700A or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] American Technical Ceramics type 100B or capacitor of same quality. BLL6H0514L-130_0514LS-130 Product data sheet List of components for component layout. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...

Page 8

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1135A Fig 8. Package outline SOT1135A BLL6H0514L-130_0514LS-130 Product data sheet ...

Page 9

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1135B Fig 9. Package outline SOT1135B BLL6H0514L-130_0514LS-130 Product data sheet ...

Page 10

... Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Acronym LDMOS RF SMD VSWR 12. Revision history Table 11. Revision history Document ID BLL6H0514L-130_0514LS-130 v.2 Modifications: BLL6H0514L-130_0514LS-130 v.1 BLL6H0514L-130_0514LS-130 Product data sheet Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Release date Data sheet status ...

Page 11

... Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BLL6H0514L-130_0514LS-130 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...

Page 12

... Contact information For more information, please visit: For sales office addresses, please send an email to: BLL6H0514L-130_0514LS-130 Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLL6H0514L-130_0514LS-130 All rights reserved. Date of release: 13 September 2010 ...

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