BLL6H0514L-130,112 NXP Semiconductors, BLL6H0514L-130,112 Datasheet

TRANSISTOR LDMOS DRIVER SOT1135A

BLL6H0514L-130,112

Manufacturer Part Number
BLL6H0514L-130,112
Description
TRANSISTOR LDMOS DRIVER SOT1135A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLL6H0514L-130,112

Package / Case
SOT1135A
Transistor Type
LDMOS
Frequency
1.2GHz ~ 1.4GHz
Gain
17dB
Voltage - Rated
100V
Current Rating
18A
Current - Test
50mA
Voltage - Test
50V
Power - Output
130W
Forward Transconductance Gfs (max / Min)
1578 S / 806 S
Resistance Drain-source Rds (on)
200 mOhms
Configuration
Single
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
18 A
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
100V
Output Power (max)
130W(Min)
Power Gain (typ)@vds
17@50VdB
Frequency (min)
960MHz
Frequency (max)
1.4GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
1.578(Max)S
Drain Source Resistance (max)
275@8.5Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Screw
Mode Of Operation
Pulsed RF
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
1. Product profile
Table 1.
Typical RF performance at T
Mode of operation
pulsed RF
Application information
1.1 General description
1.2 Features and benefits
1.3 Applications
f
(MHz)
960 to 1215
1200 to 1400
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
case
BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 2 — 13 September 2010
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
= 25
C; I
t
(s)
128
300
p
Dq
= 50 mA; in a class-AB application circuit.
(%)
10
10
V
(V)
50
50
DS
P
(W)
130
130
L
G
(dB)
19
17
p
RL
(dB)
10
10
in
54
50
(%)
D
P
(dB)
0
0
droop(pulse)
Product data sheet
t
(ns)
15
15
r
t
(ns)
8
8
f

Related parts for BLL6H0514L-130,112

BLL6H0514L-130,112 Summary of contents

Page 1

... BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 — 13 September 2010 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance case Mode of operation f (MHz) pulsed RF 960 to 1215 1200 to 1400 1.2 Features and benefits  ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLL6H0514L-130 (SOT1135A BLL6H0514LS-130 (SOT1135B [1] Connected to flange. 3. Ordering information Table 3. Type number BLL6H0514L-130 BLL6H0514LS-130 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLL6H0514L-130_0514LS-130 Product data sheet Pinning Description ...

Page 3

... All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor Conditions = 85  130 W case L = 100 s;  200  ...

Page 4

... NXP Semiconductors 6.1 Ruggedness in class-AB operation The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V  Application information 7.1 Impedance information Table 8. f MHz 1200 1300 1400 Fig 1. BLL6H0514L-130_0514LS-130 Product data sheet = 50 V ...

Page 5

... Fig 3. 001aam264 (1) (2) (3) 120 160 P ( 300 s;  Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor (dB 1.15 1.25 1.35 = 300 s;  mA Input return loss as a function of frequency; ...

Page 6

... Load power as a function of input power; typical values Printed-Circuit Board (PCB) material: Duroid 6006 with  See Table 9 for list of components. Component layout All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor 001aam266 (1) ( ...

Page 7

... SMD resistor wirewound lead resistor All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor Value Remarks 10  [ [2] 100 pF ...

Page 8

... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor 20.45 9 ...

Page 9

... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor 9.91 0.51 9.65 0.39 0.02 0.38 ...

Page 10

... Abbreviations Table 10. Acronym LDMOS RF SMD VSWR 12. Revision history Table 11. Revision history Document ID BLL6H0514L-130_0514LS-130 v.2 Modifications: BLL6H0514L-130_0514LS-130 v.1 BLL6H0514L-130_0514LS-130 Product data sheet Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Release date Data sheet status ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 September 2010 BLL6H0514L(S)-130 LDMOS driver transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLL6H0514L-130_0514LS-130 All rights reserved. Date of release: 13 September 2010 ...

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