BLL6H0514L-130,112 NXP Semiconductors, BLL6H0514L-130,112 Datasheet - Page 10

• Manufacturer Part Number: BLL6H0514L-130,112
• Description: TRANSISTOR LDMOS DRIVER SOT1135A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514L-130,112

• Package / Case: SOT1135A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 18A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 130W
• Forward Transconductance Gfs (max / Min): 1578 S / 806 S
• Resistance Drain-source Rds (on): 200 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 18 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 100V
• Output Power (max): 130W(Min)
• Power Gain (typ)@vds: 17@50VdB
• Frequency (min): 960MHz
• Frequency (max): 1.4GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 1.578(Max)S
• Drain Source Resistance (max): 275@8.5Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
10. Handling information
11. Abbreviations
12. Revision history
Table 11.
BLL6H0514L-130_0514LS-130
Product data sheet
CAUTION
Document ID
BLL6H0514L-130_0514LS-130 v.2
Modifications:
BLL6H0514L-130_0514LS-130 v.1
Revision history
Table 10.
Acronym
LDMOS
RF
SMD
VSWR
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
Release date
20100913
20100809
•
•
All information provided in this document is subject to legal disclaimers.
Description
Laterally Diffused Metal-Oxide Semiconductor
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Section 1.1 on page
page
The status of this data sheet has been changed to Product data sheet.
Rev. 2 — 13 September 2010
10.
Data sheet status
Product data sheet
Preliminary data sheet
1: Caution about ESD has been moved to
BLL6H0514L(S)-130
Change notice
-
-
LDMOS driver transistor
Supersedes
BLL6H0514L-130_
0514LS-130 v.1
-
© NXP B.V. 2010. All rights reserved.
Section 10 on
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