BLL6H0514L-130,112 NXP Semiconductors, BLL6H0514L-130,112 Datasheet - Page 7

• Manufacturer Part Number: BLL6H0514L-130,112
• Description: TRANSISTOR LDMOS DRIVER SOT1135A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514L-130,112

• Package / Case: SOT1135A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 18A
• Current - Test: 50mA
• Voltage - Test: 50V
• Power - Output: 130W
• Forward Transconductance Gfs (max / Min): 1578 S / 806 S
• Resistance Drain-source Rds (on): 200 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 18 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 100V
• Output Power (max): 130W(Min)
• Power Gain (typ)@vds: 17@50VdB
• Frequency (min): 960MHz
• Frequency (max): 1.4GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 1.578(Max)S
• Drain Source Resistance (max): 275@8.5Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLL6H0514L-130_0514LS-130
Product data sheet
Table 9.
See
[1]
[2]
[3]
Component
C1
C2, C11
C3, C4, C6, C9, C10
C5, C7, C8
C12
C13
R1
R2
American Technical Ceramics type 700A or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
Figure 7
List of components
for component layout.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 September 2010
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
SMD resistor
wirewound lead resistor
BLL6H0514L(S)-130
Value
10 F; 50 V
1 nF
100 pF
43 pF
220 F; 63 V
1 nF
10 
2.61 ; 0.25 W
LDMOS driver transistor
[1]
[2]
[2]
[3]
© NXP B.V. 2010. All rights reserved.
Remarks
fitted vertically in
series with R2
SMD 0603
fitted in series
with C13
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