FDD16AN08A0_F085 Fairchild Semiconductor, FDD16AN08A0_F085 Datasheet - Page 6

• Manufacturer Part Number: FDD16AN08A0_F085
• Description: MOSFET N-CH 75V 50A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDD16AN08A0_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1874pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD16AN08A0_F085 Rev. A1
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15. Unclamped Energy Test Circuit
g(REF)
Figure 19. Switching Time Test Circuit
P
Figure 17. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01
L
-
+
V
-
-
+
+
DD
V
V
DD
DD
6
0
I
0
0
V
V
V
g(REF)
0
0
V
DD
DS
GS
10%
GS
Figure 16. Unclamped Energy Waveforms
= 2V
Figure 20. Switching Time Waveforms
Figure 18. Gate Charge Waveforms
t
d(ON)
90%
Q
Q
gs
Q
50%
t
gs2
ON
g(TH)
10%
t
r
I
AS
PULSE WIDTH
Q
V
t
DS
gd
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
t
d(OFF)
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90%
V
t
DS
OFF
50%
t
V
f
10%
GS
V
= 10V
DD
90%