FDD16AN08A0_F085 Fairchild Semiconductor, FDD16AN08A0_F085 Datasheet - Page 10

• Manufacturer Part Number: FDD16AN08A0_F085
• Description: MOSFET N-CH 75V 50A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDD16AN08A0_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1874pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD16AN08A0_F085 Rev. A1
PSPICE Thermal Model
REV 23 March 2002
FDD16AN08A0T
CTHERM1 th 6 0.002
CTHERM2 6 5 0.004
CTHERM3 5 4 0.006
CTHERM4 4 3 0.01
CTHERM5 3 2 0.03
CTHERM6 2 tl 0.08
RTHERM1 th 6 0.075
RTHERM2 6 5 0.09
RTHERM3 5 4 0.1
RTHERM4 4 3 0.15
RTHERM5 3 2 0.2
RTHERM6 2 tl 0.25
SABER Thermal Model
SABER thermal model FDD16AN08A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 0.002
ctherm.ctherm2 6 5 = 0.004
ctherm.ctherm3 5 4 = 0.006
ctherm.ctherm4 4 3 = 0.01
ctherm.ctherm5 3 2 = 0.03
ctherm.ctherm6 2 tl = 0.08
rtherm.rtherm1 th 6 = 0.075
rtherm.rtherm2 6 5 = 0.09
rtherm.rtherm3 5 4 = 0.1
rtherm.rtherm4 4 3 = 0.15
rtherm.rtherm5 3 2 = 0.2
rtherm.rtherm6 2 tl = 0.25
}
10
RTHERM5
RTHERM1
RTHERM2
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM6
CTHERM1
CTHERM3
CTHERM4
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