FDD16AN08A0_F085 Fairchild Semiconductor, FDD16AN08A0_F085 Datasheet - Page 5

• Manufacturer Part Number: FDD16AN08A0_F085
• Description: MOSFET N-CH 75V 50A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDD16AN08A0_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1874pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD16AN08A0_F085 Rev. A1
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
1000
Figure 13. Capacitance vs Drain to Source
5000
100
50
1.4
1.2
1.0
0.8
0.6
0.4
0.1
-80
C
OSS
V
C
GS
RSS
-40
= 0V, f = 1MHz
Junction Temperature
C
V
DS
C
DS
T
GD
+ C
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
GD
1
Voltage
40
80
V
T
GS
C
C
ISS
= V
10
= 25°C unless otherwise noted
120
DS
C
o
GS
, I
C)
D
+ C
= 250 A
160
GD
200
75
Figure 14. Gate Charge Waveforms for Constant
5
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
0
1.2
Figure 12. Normalized Drain to Source
1.1
1.0
0.9
-80
V
DD
I
D
= 40V
5
= 250 A
-40
T
10
J
, JUNCTION TEMPERATURE (
Gate Current
Q
0
g
, GATE CHARGE (nC)
15
40
WAVEFORMS IN
DESCENDING ORDER:
20
80
I
I
D
D
= 50A
= 10A
120
25
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o
C)
160
30
200
35