FDD16AN08A0_F085 Fairchild Semiconductor, FDD16AN08A0_F085 Datasheet - Page 2

• Manufacturer Part Number: FDD16AN08A0_F085
• Description: MOSFET N-CH 75V 50A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDD16AN08A0_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1874pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD16AN08A0_F085 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
I
V
Q
t
B
I
r
C
C
C
Q
Q
Q
Q
t
t
t
t
t
t
V
Q
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDD16AN08A0
J
= 25°C, L = 155 H, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
FDD16AN08A0_F085
AS
= 35A.
Parameter
Device
(V
GS
= 10V)
T
C
= 25°C unless otherwise noted
TO-252AA
Package
V
V
I
I
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
I
I
I
D
D
D
D
SD
SD
SD
SD
GS
GS
J
GS
GS
DS
GS
DS
DD
GS
= 250 A, V
= 50A, V
= 25A, V
= 50A, V
= 175
= 50A
= 25A
= 50A, dI
= 50A, dI
= 0V
= 20V
= 0V to 10V
= 0V to 2V
= 60V
= V
= 25V, V
= 40V, I
= 10V, R
Test Conditions
2
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
GS
= 50A
= 250 A
= 10V
= 6V
= 10V,
/dt = 100A/ s
/dt = 100A/ s
Reel Size
= 0V,
= 0V
= 10
T
V
I
I
330mm
D
g
C
DD
= 1.0mA
= 50A
= 150
= 40V
o
C
Tape Width
Min
75
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16mm
0.013
0.019
0.032
1874
290
Typ
9.7
5.7
7.2
91
31
54
32
22
4
8
-
-
-
-
-
-
-
-
-
-
-
www.fairchildsemi.com
0.016
0.029
0.037
1.25
Max
250
100
1.0
47
93
81
34
31
2500 units
Quantity
1
4
6
-
-
-
-
-
-
-
-
-
-
-
Units
nC
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A